| 摘要 |
A method of processing a wafer, incorporating a processing chamber for subjecting a semiconductor wafer to a plasma process, a generator for generating plasma in the processing chamber, and a wafer stage for carrying thereon the semiconductor wafer so as to subject the semiconductor wafer to the plasma process, wherein the wafer stage has an attaching part for attachment to the wafer processing apparatus, which is commonly used among a plurality of wafer stages, and is configured to cope with a change of the wafer stage into a wafer stage having a different function, and a high frequency voltage for applying a bias voltage to the semiconductor wafer, and a D.C. voltage for providing a potential difference between the semiconductor wafer and the wafer stage are applied to the wafer stage.
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