发明名称 |
Power semiconductor device having high breakdown voltage, low on-resistance, and small switching loss and method of forming the same |
摘要 |
In accordance with one embodiment of the present invention, a power semiconductor device includes a first drift region of a first conductivity type extending over a semiconductor substrate. The first drift region has a lower impurity concentration than the semiconductor substrate. A second drift region of the first conductivity type extends over the first drift region, and has a higher impurity concentration than the first drift region. A plurality of stripe-shaped body regions of a second conductivity type are formed in an upper portion of the second drift region. A third region of the first conductivity type is formed in an upper portion of each body region so as to form a channel region in each body region between the third region and the second drift region. A gate electrode laterally extends over but is insulated from: (i) the channel region in each body region, (ii) a surface area of the second drift region between adjacent stripes of body regions, and (iii) a surface portion of each source region.
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申请公布号 |
US2004041229(A1) |
申请公布日期 |
2004.03.04 |
申请号 |
US20030464059 |
申请日期 |
2003.06.17 |
申请人 |
CHOL YOUNG-CHUL;KIM TAE-HOON;JANG HO-CHEOL;YUN CHONG-MAN |
发明人 |
CHOL YOUNG-CHUL;KIM TAE-HOON;JANG HO-CHEOL;YUN CHONG-MAN |
分类号 |
H01L29/06;H01L29/08;H01L29/10;H01L29/739;H01L29/78;(IPC1-7):H01L29/00 |
主分类号 |
H01L29/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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