| 摘要 |
PURPOSE: A method for forming a metal line of a semiconductor device is provided to be capable of preventing the second metal line layer from being formed on the seam of the first metal line layer. CONSTITUTION: The second metal line layer(28) is formed at the upper portion of the first metal line layer(24). At this time, the seam portion of the first metal line layer is opened to outside regardless of the second metal line layer due to the predetermined shape of the second metal line layer. Preferably, the first and second metal line layer are formed by using one selected from a group consisting of aluminum, tungsten, aluminum alloy, copper, gold, silver, molybdenum, or the resultant composition.
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