| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a long-lasting graphite crucible which shows excellent durability and inhibits deformation and damage that occur in CZ method operation. <P>SOLUTION: The graphite crucible for preparing a silicon single crystal is formed from a graphite crucible material showing a three-point bending strength of ≥40MPa, an average pore size measured by mercury penetration of 3.5-7.5μm, a nitrogen-gas permeability at an ordinary temperature of 1.0-2.5 permeability (centidarcys), a plastic yield stress at 1,680°C of ≤4MPa and a warpage of ≤0.4mm accompanying silicon carbide formation at the crucible surface. In the process for manufacturing the graphite crucible, the material is molded through rubber press method (CIP, cold isostatic pressing method), baked at 700-1,100°C and subsequently graphitized at ≥2,800°C without performing pitch impregnation/ recarbonization treatment. <P>COPYRIGHT: (C)2004,JPO |
