| 摘要 |
PROBLEM TO BE SOLVED: To form a buried copper-based metal wiring with a high throughput by polishing a copper-based metal film at a high polishing speed while suppressing the occurrence of dishing sufficiently. SOLUTION: In the process for producing a semiconductor device comprising a step for making a recess in an insulating film formed on a substrate, a step for forming a barrier metal film on the insulating film including the recess, a step for forming the copper-based metal film on the entire surface to fill the recess, and a step for forming the copper-based metal wiring on the surface of the substrate by chemical mechanical polishing, a polishing process comprises a first step for polishing until the barrier metal film is exposed at least partially using polishing slurry containing silica abrasive, oxidizing agent, amino acid, a triazole based compound and water where the content ratio of amino acid to triazole based compound (amino acid/triazole based compound) is 5-8, and a second step for polishing until the surface of the insulating film is exposed except the recess is carried out. COPYRIGHT: (C)2004,JPO
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