| 摘要 |
A test circuit for testing a first memory including a plurality of memory cells includes a first address decoder couplable to the first memory, the first address decoder configured for receiving a first input address and generating a first signal in response thereto for selectively accessing one or more of the memory cells in the first memory. The test circuit further includes a second memory including a plurality of memory cells and a second address decoder couplable to the second memory, the second address decoder configured for receiving a second input address and generating a second signal in response thereto for selectively accessing one or more of the memory cells in the second memory array. A sense circuit operatively couplable to the first and second memory arrays is configured to substantially simultaneously read data from at least one memory cell in the first memory and data from at least one corresponding memory cell in the second memory, the data in the at least one memory cell in the first memory being complementary to the data in the at least one corresponding memory cell in the second memory array. The at least one corresponding memory cell in the second memory has a controllable output drive associated therewith.
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