| 摘要 |
PURPOSE: A method for manufacturing a semiconductor device is provided to be capable of reducing the cost of an ashing process and a polymer removing process. CONSTITUTION: A conductive layer made of copper is formed at the upper portion of a semiconductor substrate. An insulating layer is formed on the conductive layer. A photoresist pattern is formed at the upper portion of the resultant structure. The conductive layer is partially exposed by selectively etching the insulating layer using the photoresist pattern as an etching mask. The resultant structure is loaded into a reactor(270). Process gas is supplied into a radical supply apparatus spaced apart from the reactor. The process gas is transformed into radical state gas by applying an RF(Radio Frequency) power of 400-2000 kHz. The radical state gas is flowed into the reactor through a radical supply tube(220). An ashing process is carried out for removing the photoresist pattern.
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