| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a dense silicon nitride sintered body with few pores and glass phases, few oxygen impurities and lattice defects that cause scattering within a silicon nitride lattice and a higher heat conductivity sufficient for achieving an excellent heat dissipation required for a heat dissipation substrate used under a condition of a high energy density. <P>SOLUTION: The silicon nitride sintered body comprises a composition containing, by mass, 85-99% silicon nitride and 1-15% total of oxides or oxynitrides of at least one metal element chosen from Mg, Ca, Y, La, Nd, Sm and Yb calculated in terms of their oxides, and an Al atom content of ≤1.0% calculated in terms of oxides. The sintered body is composed of silicon nitride particles containing deposits therein. <P>COPYRIGHT: (C)2004,JPO |
