| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a chemically amplified negative resist material which satisfies high sensitivity, high resolution and aging stability required by lithography in which fine pattern formation is required, particularly electron beam lithography and has excellent process adaptability and a good pattern shape. <P>SOLUTION: The chemically amplified negative resist material comprises at least a crosslinking agent represented by formula (1), a photoacid generator which generates an acid upon irradiation with a high energy beam and an alkali-soluble resin which takes part in a crosslinking reaction with the acid generated by the photoacid generator to lower solubility in an alkali developer. <P>COPYRIGHT: (C)2004,JPO |
