| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor device which can bury and form a film containing a noble metal without remaining a film on the film containing the noble metal without generating scratch, deforming the film containing the noble metal and without causing separation and which can improve the reliability of a highly integrated semiconductor device and can improve a manufacturing yield. SOLUTION: The method for manufacturing the semiconductor device includes steps of forming an insulating film (107) so as to cover the patterned film (106) containing the noble metal, and polishing the film (107) by chemimechanical polishing. Thus, the film containing the noble metal can be buried and formed without remaining the film on the film containing the noble metal without generating the scratch, the deformation of the film containing the noble metal and the separation. COPYRIGHT: (C)2004,JPO
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