| 摘要 |
A photodiode array (1) comprising an incident-surface-side recesses (7) formed by being thinned from the incident surface side of a light to be detected and arranged in an array form, and an opposite-surface-side recesses (11) formed by thinning, from the opposite surface side of the incident surface, an area corresponding to another area where the incident-surface-side recesses (7) are formed and arranged in an array form. A p-n junction (3) formed at the bottom of an opposite-surface-side recess (11) allows a p-n junction type photodiode to be arranged in an array form. |
