METHOD FOR ERASING A MEMORY CELL

摘要

A method for erasing a non-volatile memory cell array, the method including applying an erase pulse (100) to at least one bit of at least one memory cell of the array, erase verifying (102) the at least one bit with a first erase verify level, and if the bit has passed the first erase verify level, applying at least one more erase pulse (104) to the at least one bit.