| 摘要 |
<P>PROBLEM TO BE SOLVED: To realize a group III nitride semiconductor element equipped with an electrode, hardly separated and low in resistance, on the surface (000-1) of a group III nitride semiconductor substrate. <P>SOLUTION: A projection 113 has a facets surface in which the surface of the crystal except the surface (000-1) is exposed. The projection 113 is provided on the surface (000-1) of an n-type GaN substrate 101 through etching. Thereafter, Ti and Al are evaporated on the surface (000-1) of the substrate 101 and heat treatment is effected. <P>COPYRIGHT: (C)2004,JPO |
