SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor device in which a leak current is not generated in a hetero-junction interface of SiGe/Si, and to provide a manufacturing method thereof. SOLUTION: In the semiconductor device having the junction interface where a first conductive type SiGe and a second conductive type Si or SiGe come in contact with each other, the surface concentration of a germanium oxide (GeO2, GeO) in a portion where the junction interface is exposed outside is suppressed to 1.0×1015molecule/cm2or less. COPYRIGHT: (C)2004,JPO