发明名称 SUBSTRATE TREATING DEVICE
摘要 PROBLEM TO BE SOLVED: To reduce the power consumption of a substrate treating device during the course of substrate treatment and to improve the throughput of the device by increasing the energy efficiency of the heat treating furnace of the device. SOLUTION: In the substrate treating device having a reaction chamber in which substrates are housed and a heating means provided around the reaction chamber, the heating means 14 has a heat insulating layer 16, heating elements 17 provided on the internal surface of the layer 16, and reflecting members 21 on at least the heating elements 17 and the internal surface of the heat insulating layer 16 between the heating elements 17. COPYRIGHT: (C)2004,JPO
申请公布号 JP2004071619(A) 申请公布日期 2004.03.04
申请号 JP20020224701 申请日期 2002.08.01
申请人 HITACHI KOKUSAI ELECTRIC INC 发明人 SHIRATORI WAKAKO
分类号 H01L21/22;H01L21/205;H01L21/324;(IPC1-7):H01L21/324 主分类号 H01L21/22
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