发明名称 ION BEAM FILM DEPOSITION DEVICE
摘要 PROBLEM TO BE SOLVED: To perform film deposition by controlling the refractive index distribution in a film thickness direction of film deposition substances with high accuracy. SOLUTION: A target 2 is irradiated with ion beams from an ion gun 1, and a film constituting substance scattered from the target 2 is deposited in film on a substrate 11. The target 2 is disposed so that a first target member 2a and a second target member 2b of different film deposition substances are adjacent to each other. The target 2 is moved by a target moving mechanism 10, and the area ratio of the film constituting substances in an ion beam radiation area S of the target 2 is changed. COPYRIGHT: (C)2004,JPO
申请公布号 JP2004068100(A) 申请公布日期 2004.03.04
申请号 JP20020230172 申请日期 2002.08.07
申请人 SHIMADZU CORP 发明人 WATANABE MASAYUKI
分类号 C23C14/46;(IPC1-7):C23C14/46 主分类号 C23C14/46
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