发明名称 |
3-D spiral stacked inductor on semiconductor material |
摘要 |
A parallel spiral stacked inductor and manufacturing method therefore is provided. A substrate has a plurality of turns in a plurality of levels, the plurality of turns having a center proximate and a center distal ends. A first plurality of vias connecting the center proximate ends of the plurality of turns and a second plurality of vias connecting the center distal ends of the plurality of turns. A first connecting portion connects to the center proximate ends of the plurality of turns and a second connecting portion connecting to the center distal end of the plurality of turns. A dielectric material contains the inductor.
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申请公布号 |
US2004041234(A1) |
申请公布日期 |
2004.03.04 |
申请号 |
US20020131336 |
申请日期 |
2002.09.04 |
申请人 |
SIA CHOON-BENG;YEO KIAT SENG;CHU SHAO-FU SANFORD;NG CHENG YEOW;CHEW KOK WAI;GOH WANG LING |
发明人 |
SIA CHOON-BENG;YEO KIAT SENG;CHU SHAO-FU SANFORD;NG CHENG YEOW;CHEW KOK WAI;GOH WANG LING |
分类号 |
H01F41/04;H01F17/00;H01L21/02;H01L27/08;(IPC1-7):H01L29/00 |
主分类号 |
H01F41/04 |
代理机构 |
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地址 |
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