ATOMIC LAYER DEPOSITION OF CMOS GATES

摘要

Structures, systems and methods for transistors having gates with variable work functions formed by atomic layer deposition are provided. One transistor embodiment includes a first source/drain region, a second source/drain region, and a channel region therebetween. A gate is separated from the channel region by a gate insulator. The gate includes a ternary metallic conductor formed by atomic layer deposition to provide the ternary metal conductor with a composition engineered to provide a desired thereshold voltage.