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发明名称
Verfahren zum Bilden eines feinen Musters
摘要
申请公布号
DE19512776(B4)
申请公布日期
2004.03.04
申请号
DE1995112776
申请日期
1995.04.05
申请人
RYODEN SEMICONDUCTOR SYSTEM ENGINEERING CORP., ITAMI;MITSUBISHI DENKI K.K., TOKIO/TOKYO
发明人
OKAMOTO, CHIKAYUKI;NISHIOKA, TADASHI;KAWAZU, SATORU
分类号
H01L21/302;G03F7/40;H01L21/027;H01L21/033;H01L21/3065;(IPC1-7):G03F7/00;H01L21/310;H01L21/308;H01L21/321
主分类号
H01L21/302
代理机构
代理人
主权项
地址
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