| 摘要 |
PURPOSE: A method for etching a semiconductor device is provided to be capable of reducing the change of a dry etching process due to the density difference of a pattern, improving vertical profile of the pattern to improve yield, and improving the performance of the semiconductor device. CONSTITUTION: Bias power applied to a wafer(30) is set to zero. Plasma is generated by applying source power to the wafer. An etching process is carried out on a predetermined layer by applying the bias power of predetermined value. At this time, the predetermined layer is formed at the upper portion of the wafer. Preferably, the plasma is generated for 5-90 seconds.
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