METHOD FOR PREPARING PATTERN DATA, AND PHOTOMASK

摘要

PROBLEM TO BE SOLVED: To provide a method for preparing pattern data to form a photomask for manufacturing minute condensing lenses (microlens array) in the upper side of a light accepting part of an image sensor such as a CCD, CMOS or the like, and also to provide a method for preparing pattern data to manufacture a photomask in which the aimed resist pattern after development is accurately formed with high reproducibility.

SOLUTION: The distribution of exposure light quantity for the photomask pattern in order to obtain a desired profile after development is obtained by using a resist which varies its thickness of a remaining film depending on the exposure light quantity. The pattern forming plane of the photomask is represented by the X-Y coordinates and the distribution of transmitted light quantity (exposure light quantity) of the aimed photomask is represented by z values on the Z coordinate using the coordinate values x and y as a function. The dot pattern arrangement is determined by the grasping process of the distribution of the transmitted light quantity (exposure light quantity), and dot pattern is produced and arranged in the region in the X-Y coordinate where the pattern is to be arranged.

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