| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor integrated circuit comprising a level shift circuit by which a breakdown voltage is assured without increasing the thickness of a gate oxide film of an MOS transistor constituting a circuit, even if the amount of shifting of the potential levels of a signal becomes larger. SOLUTION: A drain high breakdown voltage MOSFETs (M13 and M14) are provided between circuits (M17, M18, etc.) to which a low potential signal (IN11) is inputted and circuits (M11, M12, etc.) from which a high potential signal OUT11 is outputted. The current flowing the drain high breakdown voltage MOSFETs (M13 and M14) relates the low potential signal (IN11) with the high potential signal (OUT11). Current limiting MOSFETs (M15 and M16) are provided to limit the current flowing the drain high breakdown voltage MOSFETs (M13 and M14). COPYRIGHT: (C)2004,JPO
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