发明名称 |
Systems and methods for forming tantalum oxide layers and tantalum precursor compounds |
摘要 |
A method of forming (and apparatus for forming) a tantalum oxide layer on a substrate, particularly a semiconductor substrate or substrate assembly, using a vapor deposition process and a tantalum precursor compound that includes alkoxide ligands, for example.
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申请公布号 |
US2004043636(A1) |
申请公布日期 |
2004.03.04 |
申请号 |
US20020230243 |
申请日期 |
2002.08.28 |
申请人 |
MICRON TECHNOLOGY, INC. |
发明人 |
VAARTSTRA BRIAN A.;QUICK TIMOTHY A. |
分类号 |
C07F9/00;C23C16/40;C23C16/44;C23C16/455;H01L21/02;H01L21/316;(IPC1-7):H01L21/31 |
主分类号 |
C07F9/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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