发明名称 |
High density flash memory architecture with columnar substrate coding |
摘要 |
A flash memory device includes a substrate having first and second wells. The first well is defined within the second well. A plurality of trenches defines the substrate into a plurality of sub-columnar active regions. The trenches is formed within the first well and extends into the second well. A plurality of flash memory cells are formed on each of the sub-columnar active regions. |
申请公布号 |
US2004041200(A1) |
申请公布日期 |
2004.03.04 |
申请号 |
US20030360598 |
申请日期 |
2003.02.06 |
申请人 |
HYUNDAI ELECTRONICS AMERICA, INC., A CALIFORNIA CORPORATION |
发明人 |
YOON SUKYOON |
分类号 |
G11C16/02;H01L21/336;H01L21/8247;H01L27/115;H01L29/788;H01L29/792;(IPC1-7):H01L29/788 |
主分类号 |
G11C16/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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