| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a semiconductor storage device and a method of manufacturing the same for attaining stable circuit operation by eliminating the influence of asymmetric storage node during the read operation and suppressing variation of a channel current resulting from the variation in manufacturing processes. <P>SOLUTION: A cell of two bits are formed of diffusing layers 12A, 12B provided separately on the substrate surface, insulation films 14A, 14B provided on the substrate adjacent to the diffusion layer 12A, gate electrodes 16A, 16B provided on the insulation films 14A, 14B, an insulation film 13 provided on the substrate, and a gate electrode 15 provided on the insulation film 13. The gate electrodes 16A, 16B are formed as word line electrodes connected in common and include a control gate electrode extended in the direction orthogonal to the word line electrodes and an embedded diffusion layer on the substrate surface located at the end portion in the longitudinal direction of the control gate electrode. In the case of the read operation of the Node 1, the read operation of the object storage node (Node 1) may be realized without intermediating through the non-object storage node (Node 2) by executing the read operation using the control gate channel as the drain. This read operation can be free from the influence of the non-object storage node (Node 2). <P>COPYRIGHT: (C)2004,JPO</p> |
