| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To form a high-performance fine thin film transistor with a high yield. <P>SOLUTION: A method of manufacturing a device equipped with a thin film transistor includes a step of forming an insulating film covering the thin film transistor, a step of forming an opening in the insulating film, and a step of forming a conductive member which is in contact with at least one of a source region and a drain region of the transistor through the opening and insulated from a gate electrode. In the step of forming the insulating film, a first insulating larger covering the transistor, a second insulating layer, and a third insulating layer are successively deposited. The second insulating layer is formed of a material showing an etching characteristic which is different from that of a material forming the third insulating layer. In the step of forming the opening, the opening is formed by a step of forming a pattern which specifies the opening in the third insulating layer, a step of forming the opening in the third insulating layer by etching the third insulating layer by using a pattern as an etching mask under a condition that the third insulating layer is selectively etched other than the second insulating layer, and a step of etching the second and first insulating layers via the opening of the third insulating layer. <P>COPYRIGHT: (C)2004,JPO</p> |
