| 摘要 |
<P>PROBLEM TO BE SOLVED: To obtain a polymeric compound useful as a base polymer for a resist material suitable for a fine processing technology, especially a chemically amplifying resist material, a resist material, and to provide a method for forming a pattern. <P>SOLUTION: The polymeric compound contains a recurring unit expressed by formula (1) [wherein, R<SP>1</SP>to R<SP>3</SP>are each H, F, an alkyl or a fluorinated alkyl; R<SP>4</SP>is a single bond, an alkylene or a fluorinated alkylene; R<SP>5</SP>is a single bond, O, an alkylene or a fluorinated alkylene; R<SP>6</SP>is methylene, O or S; R<SP>7</SP>to R<SP>10</SP>are each H, F, a fluorinated alkyl, R<SP>11</SP>OR<SP>12</SP>, R<SP>11</SP>COOR<SP>12</SP>or OR<SP>12</SP>; R<SP>11</SP>is a single bond, an alkylene or a fluorinated alkylene; R<SP>12</SP>is H or an acid-labile group; and (a) is 0 or 1] and has 1,000-500,000 weight average molecular weight. The resist material is provided by having improved transparency, close adhesion and developing liquid permeability of the resist, at the same time capable of becoming a resist material having an excellent plasma etching resistance, easily forming patterns and suitable as the fine pattern-forming material for producing a super LSI (large scale integration). <P>COPYRIGHT: (C)2004,JPO |
