发明名称 Si CLATHRATE SINGLE CRYSTAL AND ITS PREPARATION PROCESS
摘要 PROBLEM TO BE SOLVED: To provide a single crystal of a Ba-containing Si clathrate compound by easily growing it at a low cost. SOLUTION: The Si clathrate single crystal comprises a compound wherein some Si atoms are replaced by other atoms in the Si clathrate wherein a dodecahedral Si<SB>20</SB>fullerene comprising twelve 5-membered ring planes made of Si atoms is positioned at each lattice point in a body-centered cubic lattice structure, six enclosed space regions enclosed by adjacent Si<SB>20</SB>fullurenes are formed per unit lattice, six tetrakaidecahedral Si<SB>24</SB>fullurenes comprising twelve 5-membered ring planes and two 6-membered ring planes are formed per unit lattice by adding a Si atom per each enclosed space region, and a Ba atom is included in each fullerene. Here, x (provided that 10.8≤x≤12.2) Si atoms are replaced by either Al or Ga atoms to yield a composition ratio of Ba<SB>8</SB>(Al, Ga)<SB>x</SB>Si<SB>46-x</SB>. COPYRIGHT: (C)2004,JPO
申请公布号 JP2004067425(A) 申请公布日期 2004.03.04
申请号 JP20020227156 申请日期 2002.08.05
申请人 SUMITOMO METAL IND LTD 发明人 MUNETO SHINJI;KAMEI KAZUTO
分类号 C01B33/06;C30B11/00;C30B29/52;C30B29/66;H01L35/14;H01L35/34;(IPC1-7):C30B29/66 主分类号 C01B33/06
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