发明名称 Single substrate annealing of magnetoresistive structure
摘要 A device for magnetically annealing magnetoresistive elements formed on wafers includes a heated chuck and a delivery mechanism for individually placing the wafers individually on the chuck one at a time. A coil is adjacent to the chuck and generates a magnetic field after the wafer is heated to a Néel temperature of an anti-ferromagnetic layer. A control system regulates the temperature of the heated chuck, the strength of the magnetic field, and a time period during which each chuck is heated to control the annealing process. The annealed elements are incorporated in the fabrication of magnetic memory devices.
申请公布号 US2004040628(A1) 申请公布日期 2004.03.04
申请号 US20020229136 申请日期 2002.08.28
申请人 TUTTLE MARK E.;WEIMER RONALD A. 发明人 TUTTLE MARK E.;WEIMER RONALD A.
分类号 H01F41/30;(IPC1-7):H01F41/22 主分类号 H01F41/30
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