发明名称 Vapor deposition of metal oxides, silicates and phosphates, and silicon dioxide
摘要 Metal silicates or phosphates are deposited on a heated substrate by the reaction of vapors of alkoxysilanols or alkylphosphates along with reactive metal amides, alkyls or alkoxides. For example, vapors of tris-(ter-butoxy)silanol react with vapors of tetrakis(ethylmethylamido)hafnium to deposit hafnium silicate on surfaces heated to 300 ° C. The product film has a very uniform stoichiometry throughout the reactor. Similarly, vapors of diisopropylphosphate react with vapors of lithium bis(ethyldimethylsilyl)amide to deposit lithium phosphate films on substrates heated to 250 ° C. supplying the vapors in alternating pulse produces these same compositions with a very uniform distribution of thickness and excellent step coverage.
申请公布号 US2004043149(A1) 申请公布日期 2004.03.04
申请号 US20030381628 申请日期 2003.09.02
申请人 GORDON ROY G.;BECKER JILL;HAUSMANN DENNIS;SUH SEIGI 发明人 GORDON ROY G.;BECKER JILL;HAUSMANN DENNIS;SUH SEIGI
分类号 C23C16/42;C07F9/09;C07F9/11;C23C16/40;C23C16/44;C23C16/455;H01L21/314;H01L21/316;(IPC1-7):C23C16/40 主分类号 C23C16/42
代理机构 代理人
主权项
地址