发明名称 |
FERROELECTRIC DEVICE AND METHOD OF MANUFACTURING SUCH A DEVICE |
摘要 |
The invention relates to a ferroelectric device (10) with a body (11) comprising a substrate (1) and a ferroelectric layer (2) provided with a connection conductor (3) on a side facing away from the substrate (1), which ferroelectric layer contains an oxygen-free ferroelectric material (2) and is used to form an active electrical element (4), in particular a memory element (4). Such a device forms an attractive non-volatile memory device. In accordance with the invention, a conductive layer (5) is present between the substrate (1) and the ferroelectric layer (2), which conductive layer forms a further connection conductor (5) of the ferroelectric layer (2), and the active electrical element (4) is obtained as a result of the fact that the ferroelectric layer (2) forms a Schottky junction with at least one of the connection conductors (3, 5). In practice it has been found that such a device (10) comprises a well-performing memory element (4) that can be readily formed on a, preferably monocrystalline, silicon substrate (1). Preferably, the device (10) further comprises a field effect transistor (6), and the element (4) is preferably situated above the source or drain region (7) of the transistor (6). The active element also may function as a diode. |
申请公布号 |
WO2004019410(A1) |
申请公布日期 |
2004.03.04 |
申请号 |
WO2003IB03189 |
申请日期 |
2003.07.10 |
申请人 |
KONINKLIJKE PHILIPS ELECTRONICS N.V.;LANKHORST, MARTIJN, H., R.;VAN DER SLUIS, PAUL;WOLF, RONALD, M. |
发明人 |
LANKHORST, MARTIJN, H., R.;VAN DER SLUIS, PAUL;WOLF, RONALD, M. |
分类号 |
H01L27/10;G11C11/22;G11C11/36;H01L21/02;H01L21/8246;H01L27/105;H01L27/115;H01L29/76;H01L49/02 |
主分类号 |
H01L27/10 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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