Production of group II oxide film for semiconductor, e.g. (opto)electronic device based on p-doped zinc oxide, uses one gas phase epitaxy chamber to grow buffer layer, using given oxygen precursor, and main layer at higher temperature

摘要

In the production of group II oxide films by gas phase epitaxy, a buffer layer is deposited at a lower temperature than the main layer in the same growth chamber and oxygen precursors of the type water and/or organic nitroso, ketone and/or ether compound(s) are used for growth of the buffer layer. In the production of group II oxide films by gas phase epitaxy, a buffer layer is deposited at a lower temperature than the main layer in the same growth chamber and oxygen precursors of the type H-O-H, NO-R, O=R and/or R-O-R (where R = any organic group) are used for growth of the buffer layer. Independent claims are also included for: (a) group II oxide film produced in this way; (b) group II oxide semiconductor device with the specified buffer and main layers, which has an n-p junction obtained by doping with main group III elements and a p-type layer with main group V elements.