发明名称 Process for growing single crystals comprises holding the crystal at a temperature close to the melting temperature whilst the crystal material drawn from the melt and solidified is partially screened from heat losses
摘要 Process for growing single crystals comprises holding the crystal at a temperature close to the melting temperature whilst the crystal material drawn from the melt and solidified is partially screened from heat losses and/or the heat losses are compensated for by an additional heater. An Independent claim is also included for a device for growing single crystals.
申请公布号 DE10315706(A1) 申请公布日期 2004.03.04
申请号 DE2003115706 申请日期 2003.04.07
申请人 FEE FORSCHUNGSINSTITUT FUER MINERALISCHE UND METALLISCHE WERKSTOFFE EDELSTEINE/EDELMETALLE GMBH 发明人 ACKERMANN, LOTHAR;RYTZ, DANIEL;DUPRE, KLAUS
分类号 C30B15/00;C30B15/14 主分类号 C30B15/00
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