发明名称 |
Process for growing single crystals comprises holding the crystal at a temperature close to the melting temperature whilst the crystal material drawn from the melt and solidified is partially screened from heat losses |
摘要 |
Process for growing single crystals comprises holding the crystal at a temperature close to the melting temperature whilst the crystal material drawn from the melt and solidified is partially screened from heat losses and/or the heat losses are compensated for by an additional heater. An Independent claim is also included for a device for growing single crystals. |
申请公布号 |
DE10315706(A1) |
申请公布日期 |
2004.03.04 |
申请号 |
DE2003115706 |
申请日期 |
2003.04.07 |
申请人 |
FEE FORSCHUNGSINSTITUT FUER MINERALISCHE UND METALLISCHE WERKSTOFFE EDELSTEINE/EDELMETALLE GMBH |
发明人 |
ACKERMANN, LOTHAR;RYTZ, DANIEL;DUPRE, KLAUS |
分类号 |
C30B15/00;C30B15/14 |
主分类号 |
C30B15/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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