| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To easily make a fine control structure limiting a displacement of an action body. <P>SOLUTION: A SOI substrate has a three-layer structure including silicon/silicon oxide/silicon layers. Induction coupled type plasma etching for selecting and removing only the silicon is applied to the upper layer to form openings H1 to H4, an island section 110, a bridge section 120, and fixed sections 131 to 134. The same etching is applied to the lower layer to divide the layer into action bodies (311 to 314) like a blade of a blower and a seat 330. Etching for selecting and removing only the silicon oxide is applied so as to leave a center section and its surrounding of the middle layer. The sensor detects a skew based on a change in resistance value of a piezoresistive element provided in the bridge section 120 to detect an external force or acceleration applied to the action body. A control surface to which hatching is applied is brought into contact with the fixing sections 131 to 134 so as to control an upper direction displacement of the action body. <P>COPYRIGHT: (C)2004,JPO</p> |
