| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a mask, an exposing method and a process for fabricating a semiconductor device in which variation in the line width of a resist pattern can be suppressed at the joint with a complementary split pattern. <P>SOLUTION: The method for exposing a pattern having a constant line width and split into first and second patterns by a split line comprises a step for exposing the first pattern through a first thin film provided with a hole having a partially thinned shape of the first pattern and a first dummy hole, and a step for exposing the second pattern through a second thin film provided with a hole having a partially thinned shape of the second pattern and a second dummy hole. In the exposing method, the quantity of exposing light is regulated such that the incident positions of charged particle beams transmitted the first and second dummy holes overlap on the exposing surface when the positional shift of the first and second patterns being transferred onto the exposing surface has a specified magnitude and thereby the pattern is reproduced on the exposing surface with a constant line width. The mask employs it and the process for fabricating a semiconductor device includes that exposing method. <P>COPYRIGHT: (C)2004,JPO</p> |
