| 摘要 |
There a provided a first insulating layer formed over a semiconductor substrate, a cell plate line formed on the first insulating layer and having a slit that divides a region except a contact area into both sides, a capacitor dielectric layer formed on the cell plate on both sides of the slit and having a clearance over the slit, and a plurality of capacitor upper electrodes formed on the capacitor dielectric layer in one column on both sides of the slit.
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