发明名称 |
Gate dielectric antifuse circuit to protect a high-voltage transistor |
摘要 |
According to embodiments of the present invention, circuits have elements to protect a high-voltage transistor in a gate dielectric antifuse circuit. An antifuse has a layer of gate dielectric between a first terminal coupled to receive an elevated voltage and a second terminal, and a high-voltage transistor is coupled to the antifuse and has a gate terminal. An intermediate voltage between the supply voltage and the elevated voltage is coupled to the gate terminal of the high-voltage transistor to protect the high-voltage transistor.
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申请公布号 |
US2004041167(A1) |
申请公布日期 |
2004.03.04 |
申请号 |
US20020230928 |
申请日期 |
2002.08.29 |
申请人 |
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发明人 |
MARR KENNETH W.;PORTER JOHN D. |
分类号 |
G11C17/18;H01L23/525;H01L29/78;(IPC1-7):H01L29/74 |
主分类号 |
G11C17/18 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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