发明名称 Substrate processing device and processing method
摘要 In a state where a process gas including SF.sub.6 and O.sub.2 is supplied in a chamber, a laser light irradiator provided outside the chamber irradiates a laser light onto a substrate. At the portion of the substrate onto which the laser light is irradiated, the material that makes up the substrate is excited and converted into a gaseous substance by reacting with the process gas. The temperature of the substrate placed on a stage is kept at a predetermined temperature since a temperature adjuster supplies a chiller to a coolant flow passage provided inside the stage.
申请公布号 US2004040655(A1) 申请公布日期 2004.03.04
申请号 US20030652504 申请日期 2003.09.02
申请人 TOKYO ELECTRON LIMITED 发明人 YUASA MITSUHIRO
分类号 B28D5/00;B81C1/00;H01L21/00;H01L21/301;(IPC1-7):H01L21/306 主分类号 B28D5/00
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