摘要 |
PROBLEM TO BE SOLVED: To minimize the fault of MOSFETs by avoiding all failure of MOSFETs caused by the turn at parallel connection of MOSFETs. SOLUTION: A gate ON current I<SB>ON</SB>is discharged from a pnp transistor 14 to the gates of (n) pieces of MOSFETs 4j(j=1, 2... N) via (n) pieces of diodes 15j(j=1, 2... N), and also (n) pieces of diodes 15j check the turn from a faulty MOSFET, and (n) pieces of npn transistors 16j(j=1, 2...N) suck the gate OFF current I<SB>OFF</SB>from the gate of (n) pieces of MOSFETs 4j(j=1, 2... N). COPYRIGHT: (C)2004,JPO
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