发明名称 METHOD AND DEVICE FOR CLEANING SILICON WAFER WITH HYDROGEN FLUORIDE (HF)
摘要 PROBLEM TO BE SOLVED: To improve the yield of a silicon wafer by suppressing the formation of pits on the surface of the wafer at the time of cleaning the wafer with a HF-based solution. SOLUTION: At the time of cleaning the silicon wafer with the HF-based solution, the wafer is dipped in the solution while the surface of the wafer is illuminated. When the silicon wafer to the surface of which a metal adheres is dipped in the HF-based solution and kept in the illuminated state, paired electron-holes (e<SP>-</SP>-h<SP>+</SP>) are generated. The electrons e<SP>-</SP>of the paired electron-holes are supplemented as the incremental amount of electron consumption during the course of a hydrogen generating reducing reaction. Consequently, the formation of pits on the surface of the silicon wafer is suppressed when the wafer is cleaned with the HF-based solution. COPYRIGHT: (C)2004,JPO
申请公布号 JP2004071626(A) 申请公布日期 2004.03.04
申请号 JP20020224846 申请日期 2002.08.01
申请人 KOMATSU ELECTRONIC METALS CO LTD 发明人 MITSUGI NORITOMO;NAGAI SEIJI
分类号 H01L21/304;(IPC1-7):H01L21/304 主分类号 H01L21/304
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