发明名称 |
METHOD AND DEVICE FOR CLEANING SILICON WAFER WITH HYDROGEN FLUORIDE (HF) |
摘要 |
PROBLEM TO BE SOLVED: To improve the yield of a silicon wafer by suppressing the formation of pits on the surface of the wafer at the time of cleaning the wafer with a HF-based solution. SOLUTION: At the time of cleaning the silicon wafer with the HF-based solution, the wafer is dipped in the solution while the surface of the wafer is illuminated. When the silicon wafer to the surface of which a metal adheres is dipped in the HF-based solution and kept in the illuminated state, paired electron-holes (e<SP>-</SP>-h<SP>+</SP>) are generated. The electrons e<SP>-</SP>of the paired electron-holes are supplemented as the incremental amount of electron consumption during the course of a hydrogen generating reducing reaction. Consequently, the formation of pits on the surface of the silicon wafer is suppressed when the wafer is cleaned with the HF-based solution. COPYRIGHT: (C)2004,JPO
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申请公布号 |
JP2004071626(A) |
申请公布日期 |
2004.03.04 |
申请号 |
JP20020224846 |
申请日期 |
2002.08.01 |
申请人 |
KOMATSU ELECTRONIC METALS CO LTD |
发明人 |
MITSUGI NORITOMO;NAGAI SEIJI |
分类号 |
H01L21/304;(IPC1-7):H01L21/304 |
主分类号 |
H01L21/304 |
代理机构 |
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主权项 |
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地址 |
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