| 摘要 |
PROBLEM TO BE SOLVED: To provide a process chamber for semiconductor production equipment that prevents engraving of an inside of the chamber due to ions and particle induction caused by the engraving by coating a predetermined protective layer on an inside of the chamber. SOLUTION: The process chamber for semiconductor production equipment 100 includes a chamber body 120; an upper electrode 140 positioned on an upside of the chamber body; a shield ring 144 positioned laterally to the upper electrode in order to insulate the electrode; a lower electrode 160 positioned below the upper electrode with being segregated from the electrode at a predetermined interval; an electrostatic chuck 162 positioned above the lower electrode by which a wafer is mounted safely; and an insulating ring unit 170 positioned laterally to the lower electrode in order to insulate the electrode, wherein the shield ring and the insulating ring unit have a protective layer that prevents engraving by the reactive gas ions in the plasma condition. Accordingly, when the reactive gas ions in the plasma condition engrave the wafer, the shield ring and the insulating ring unit are prevented from the engraving. COPYRIGHT: (C)2004,JPO
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