发明名称 |
Method and apparatus for endpoint detection in electron beam assisted etching |
摘要 |
Techniques for detecting endpoints during semiconductor dry-etching processes are described. The dry-etching process of the present invention involves using a combination of a reactive material and a charged particle beam, such as an electron beam. In another embodiment, a photon beam is used to facilitate the etching process. The endpoint detection techniques involve monitoring the emission levels of secondary electrons and backscatter electrons together with the current within the sample. Depending upon the weight given to each of these parameters, an endpoint is identified when the values of these parameters change more than a certain percentage, relative to an initial value for these values.
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申请公布号 |
US2004043621(A1) |
申请公布日期 |
2004.03.04 |
申请号 |
US20030420429 |
申请日期 |
2003.04.21 |
申请人 |
KLA-TENCOR TECHNOLOGIES CORPORATION, A CORPORATION OF CALIFORNIA |
发明人 |
NASSER-GHODSI MEHRAN |
分类号 |
H01L21/3065;G01R31/26;H01L21/302;H01L21/306;H01L21/461;(IPC1-7):H01L21/461 |
主分类号 |
H01L21/3065 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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