发明名称 Apparatus and method for preventing etchant condensation on wafer in a cooling chamber
摘要 An apparatus and a method for preventing etchant condensation on a wafer surface positioned in a wafer cool-down chamber after plasma etching. The apparatus of the process chamber includes a chamber enclosure of elongated shape with an aperture in a top plate, a heating means mounted on the top plate for heating a wafer through the aperture positioned in the cavity; and an exhaust means in fluid communication with an exhaust opening provided at a back end of the chamber enclosure for evacuating gaseous content in the cavity during and after the heating of the wafer, and for cooling the wafer after the radiant heater is turned off.
申请公布号 US2004040509(A1) 申请公布日期 2004.03.04
申请号 US20020235120 申请日期 2002.09.04
申请人 TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. 发明人 LU KUO-LIANG;HSU CHIN-YUAN;HO WEN-ZHONG;CHEN CHONG-LEE
分类号 H01L21/00;H01L21/306;(IPC1-7):H01L21/306 主分类号 H01L21/00
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