Semiconductor device having a polysilicon line structure with increased metal silicide portions and method for forming the polysilicon line structure of a semiconductor device

摘要

A method is provided for forming polysilicon line structures, such as gate electrodes of field effect transistors, according to which oxide spacers are removed from the sidewalls of the poly gate lines before depositing the liner oxide. Accordingly, after formation of the final spacers, the polysilicon line sidewalls are no longer covered with spacer oxide but all silicide pre-cleans can clear the poly sidewalls completely which thus leads to improved silicidation conditions, resulting in gate lines exhibiting very low sheet resistivity.