| 摘要 |
PROBLEM TO BE SOLVED: To reduce a signal delay based on an RC (routing channel) delay existing between the body electrode of an FET (field effect transistor) which takes the body electrode in an SOILSI (siliconon insulator large scale integrated circuit) and a body part below a channel. SOLUTION: The LSI has a circuit constituted of the SOIFET 10A which does not take the body electrode, and another SOIFET 10B which takes the body electrode. The thickness of film of the body 5 of the FET 10A having the body electrode is made thicker than that of the body 5 of the FET having no body electrode. According to this method, the resistance of body of the SOIFET having the body electrode is reduced, and the signal delay between the body electrode and the body below the channel is reduced. Accordingly, the facilitation of design of the thin film SOI/LSI and the reduction of a cost based on the facilitation are contrived. COPYRIGHT: (C)2004,JPO
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