| 摘要 |
A stacked via structure ( 200 ) adapted to transmit high frequency signals or high intensity current through conductive layers of an electronic device carrier is disclosed. The stacked via structure comprises at least three conductive tracks ( 205 a, 205 b, 205 c) belonging to three adjacent conductive layers ( 110 a, 110 b, 110 c) separated by dielectric layers ( 120 ), aligned according to z axis. Connections between these conductive tracks are done with at least two vias ( 210, 215 ) between each conductive layer. Vias connected to one side of a conductive track are disposed such that they are not aligned with the ones connected to the other side according to z axis. |
