发明名称 |
Process for producing a semiconductor wafer |
摘要 |
The method involves etching the semiconducting wafer (1), whereby an etching medium (2) flows along a flow direction in a laminar manner to an edge of the semiconducting wafer. A protective shield (5) is mounted in front of the edge of the wafer so that the etching medium flows against the shield and not against the edge of the wafer. The shield can be inclined to the flow direction of the etching medium. |
申请公布号 |
EP1119031(A3) |
申请公布日期 |
2004.03.03 |
申请号 |
EP20010101103 |
申请日期 |
2001.01.18 |
申请人 |
WACKER SILTRONIC AG |
发明人 |
SCHWAB, GUENTER;FRANKE, HELMUT;SCHOEFBERGER, MANFRED |
分类号 |
H01L21/02;H01L21/00;H01L21/304;H01L21/306 |
主分类号 |
H01L21/02 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|