METHOD FOR FORMING ISOLATION LAYER OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for forming an isolation layer of a semiconductor device is provided to improve a planarization characteristic of a semiconductor device and facilitate a subsequent process by depositing a SiH4-H2O2 oxide layer in a trench filling process and by exhausting the moisture included in a layer and performing a process in a condition of high temperature and high pressure. CONSTITUTION: A pad oxide layer is formed on a semiconductor substrate(11). A nitride layer is formed on the pad oxide layer. The nitride layer and the pad oxide layer are etched to form a trench. A thermal oxide layer is formed on the trench. The surface of the thermal oxide layer becomes hydrophilic. A SiH4-H2O2 oxide layer is deposited on the resultant structure. The moisture in the SiH4-H2O2 oxide layer is exhausted and the SiH4-H2O2 oxide layer is planarized. A capping layer is deposited on the SiH4-H2O2 oxide layer. The first heat treatment for eliminating moisture is performed on the surface of the resultant structure. The second heat treatment for densification is performed on the surface of the resultant structure. A CMP(chemical mechanical polishing) process is performed on the surface of the resultant structure to remove the SiH4-H2O2 oxide layer. The nitride layer is removed.