发明名称 |
Mixed acid solution in etching process, process for producing the same, etching process using the same and process for producing semiconductor device |
摘要 |
There is disclosed an etching solution containing at least hydrofluoric acid, nitric acid and hexafluorosilicic acid wherein the concentration of hexafluorosilicic acid is not less than 10% by weight based on the weight of the etching solution. |
申请公布号 |
EP1178526(A3) |
申请公布日期 |
2004.03.03 |
申请号 |
EP20010117723 |
申请日期 |
2001.07.27 |
申请人 |
MITSUBISHI CHEMICAL CORPORATION;NIPPON KASEI CHEMICAL COMPANY LIMITED |
发明人 |
HAGA, SADAO;ITOU, KATSUJI |
分类号 |
H01L21/3063;H01L21/306 |
主分类号 |
H01L21/3063 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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