发明名称 Method for producing semiconductor articles
摘要 <p>A method for producing a semiconductor article comprises the steps of preparing a first substrate having a non-porous semiconductor layer on a porous semiconductor region, forming unevenness on the surface at the side of said semiconductor layer of said first substrate; bonding the surface of said first substrate having said unevenness formed thereon to the surface of said second substrate so as to be in contact with each other, and removing said porous semiconductor under the state that said semiconductor layer is bonded to said second substrate to thereby transfer said semiconductor layer from said first substrate onto said second substrate. <IMAGE></p>
申请公布号 EP0536790(B1) 申请公布日期 2004.03.03
申请号 EP19920117328 申请日期 1992.10.09
申请人 CANON KABUSHIKI KAISHA 发明人 ICHIKAWA, TAKESHI;YONEHARA, TAKAO;SAKAMOTO, MASARU;NARUSE, YASUHIRO;NAKAYAMA, JUN;YAMAGATA, KENJI;SAKAGUCHI, KIYOFUMI
分类号 H01L21/02;H01L21/304;H01L21/306;H01L21/762;H01L27/12;(IPC1-7):H01L21/76;H01L21/20 主分类号 H01L21/02
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